NXP Semiconductors
Schottky barrier diodes
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VR
continuous reverse voltage
PRLL5817
PRLL5818
PRLL5819
VRSM
non-repetitive peak reverse voltage
PRLL5817
PRLL5818
PRLL5819
VRRM
repetitive peak reverse voltage
PRLL5817
PRLL5818
PRLL5819
VRWM
crest working reverse voltage
PRLL5817
PRLL5818
PRLL5819
IF(AV)
IFSM
average forward current
non-repetitive peak forward current
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
Tamb = 60 °C
−
t = 10 ms half sine wave;
−
Tj = Tj max prior to surge: VR = 0
−65
−
MAX.
20
30
40
24
36
48
20
30
40
20
30
40
1
25
+175
125
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
A
A
°C
°C
1999 Apr 22
3