2SK3289 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK3289

Silicon N Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SK3289

Silicon N Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA)

RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)

• 4 V gate drive device.

• Small package (CMPAK)

Outline

CMPAK

3

D

G

S

ADE-208-743C (Z)

4th.Edition.

June 1999

1

2

1. Source

2. Gate

3. Drain

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