GFP50N06 Ver la hoja de datos (PDF) - Thinki Semiconductor Co., Ltd.
Número de pieza
componentes Descripción
Fabricante
GFP50N06 Datasheet PDF : 6 Pages
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GFP50N06
Typical Characteristics
VGS
Top : 15.0 V
102
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
※ Note :
1. 250μ s Pulse Test
2. T = 25℃
C
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.05
0.04
V = 10V
GS
0.03
V = 20V
GS
0.02
0.01
0.00
0
※ Note : TJ = 25℃
50
100
150
200
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
2000
1500
C
oss
Ciss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
C
rss
500
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175℃
25℃
100
2
-55℃
※ Notes :
1.
2.
V25DS0μ=s30PVulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
0.2
175℃
25℃
※ Notes :
1.
2.
V25GS0μ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 30V
DS
V = 48V
DS
8
6
4
2
※ Note : I = 50A
D
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/6
http://www.thinkisemi.com/
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