2SD1616 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Número de pieza

componentes Descripción

Fabricante

2SD1616

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SD1616 TRANSISTOR (NPN)

FEATURES

z Low VCE(sat)

z Complementary Transistor with The 2SB1116

TO – 92

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

60

50

6

1

750

166

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Collector-base breakdown voltage

V(BR)CBO

Collector-emitter breakdown voltage

V(BR)CEO

Emitter-base breakdown voltage

V(BR)EBO

Collector cut-off current

ICBO

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

IEBO

hFE(1)*

hFE(2)*

VCE(sat) *

VBE (sat) *

VBE*

Collector output capacitance

Cob

Transition frequency

fT

*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.

Test conditions

IC= 0.01mA,IE=0

IC=2mA,IB=0

IE=0.01mA,IC=0

VCB=60V,IE=0

VEB=6V,IC=0

VCE=2V, IC=100mA

VCE=2V, IC=1A

IC=1A,IB=50mA

IC=1A,IB=50mA

VCE=2V, IC=50mA

VCB=10V,IE=0, f=1MHz

VCE=2V,IC=100mA

Min Typ Max Unit

60

V

50

V

6

V

0.1

μA

0.1

μA

135

600

81

0.3

V

1.2

V

0.6

0.7

V

19

pF

100

MHz

CLASSIFICATION OF hFE

RANK

L

RANGE

135-270

K

200-400

U

300-600

www.cj-elec.com

1

C,Dec,2015

Share Link: