2SD2583 Ver la hoja de datos (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Número de pieza

componentes Descripción

Fabricante

2SD2583

TRANSISTOR (NPN)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SD2583

2SD2583 TRANSISTOR (NPN)

D FEATURES

Power dissipation

T PCM:

1 W (Tamb=25℃)

.,L Collector current

ICM:

5A

Collector-base voltage

O V(BR)CBO:

30 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

N Collector-base breakdown voltage

O Collector-emitter breakdown voltage

Emitter-base breakdown voltage

R Collector cut-off current

T Emitter cut-off current

C DC current gain

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

LE Collector-emitter saturation voltage

VCE(sat)

E Base-emitter saturation voltage

J Transition frequency

WECollector output capacitance

VBE(sat)

fT

Cob

Test conditions

Ic=0.1mA, IE=0

Ic=1mA, IB=0

IE=0.1mA, IC=0

VCB=30V, IE=0

VEB=6V, IC=0

VCE=2V, IC=1A

VCE=2V, IC=4A

IC=1A, IB=50mA

IC=2A, IB=100mA

IC=4A, IB=200mA

IC=2A, IB=100mA

VCE=10V, IC=50mA

VCB=10V, IE=0, f=1MHz

MIN TYP MAX UNIT

30

V

30

V

6

V

0.1 µA

0.1 µA

150

600

50

0.15

0.25 V

0.5

1.5 V

120

MHz

77

pF

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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