2SA1964 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SA1964

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tj=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc=-1mA; le= 0

V(BR)CBO Collector-Base Breakdown Voltage

lc= -50 u A; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

lE=-50nA;lc=0

VcE(sat) Collector-Emitter Saturation Voltage IC=-1A;IB=-0.1A

ICBO

Collector Cutoff Current

VCB=-160V;IE=0

IEBO

Emitter Cutoff Current

VEB= -4V; lc= 0

hFE

DC Current Gain

lc=-0.1A;VCE=-5V

fr

Current-Gain—Bandwidth Product

lc=-0.2A;VCE=-10V

COB

Output Capacitance

IE=0; VCB=-10V;f=1MHz

Classifications

D

E

60-120

1 00-200

2SA1964

MIN TYP. MAX UNIT

-160

V

-160

V

-5

V

-1.0

V

-1.0 uA

-1.0 uA

60

200

150

MHz

35

pF

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