2SA1964 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SA1964

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1964

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -160V(Min)

·Good Linearity of hFE

·Wide Area of Safe Operation

·Complement to Type 2SC5248

APPLICATIONS

·Power amplifier applications.

·Driver stage amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

-1.5

A

2

W

20

150

℃

-55~150 ℃

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