LNJ308G8TRA Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Fabricante
LNJ308G8TRA Datasheet PDF : 3 Pages
| |||
Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ308G8TRA
Surface Mounting Chip LED
SS Type
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Power dissipation
PD
50
mW
Forward current
Pulse forward current *
IF
20
mA
IFP
100
mA
Reverse voltage
Operating ambient temperature
VR
4
V
Topr
–25 to +85
°C
Storage temperature
Tstg –40 to +100 °C
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Luminous intensity
Reverse current
Forward voltage
Peak emission wavelength
Spectral half band width
IO IF = 10 mA
IR VR = 4 V
VF IF = 10 mA
λP IF = 10 mA
Δλ IF = 10 mA
IO IF
IF VF
100
10
Lighting Color
Yellow Green
Min Typ Max Unit
2.25 5.0
mcd
10
µA
2.03 2.6
V
565
nm
30
nm
Relative luminous intensity Ta
1 000
10
100
1
0.1
1
10
100
Forward current IF (mA)
1
1.6
1.8
2.0 2.2
2.4
Forward voltage VF (V)
10
−20 0
20 40 60 80 100
Ambient temperature Ta (°C)
Relative luminous intensity λP
IF Ta
25
100
Directive characteristics
20
80
20° 10° 0° 10° 20°
30°
30°
15
60
40°
80°
40°
50°
50°
60°
10
40
60°
60°
70°
40°
70°
20
5
80°
20°
80°
0
90°
90°
500
600
700
800 100 80 60 40 20 0 20 40 60 80 100
Peak emission wavelength λP (nm)
Relative luminous intensity (%)
00
20
40
60
80
100
Ambient temperature Ta (°C)
Publication date: December 2008
SHD00417BEK
1
Share Link: 