75N75 Ver la hoja de datos (PDF) - Unisonic Technologies
Número de pieza
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Fabricante
75N75 Datasheet PDF : 6 Pages
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75N75
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
75
V
VGSS
±20
V
Continuous Drain Current
TC = 25°C
ID
Pulsed Drain Current (Note 2)
IDM
80
A
320
A
Single Pulsed Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
700
mJ
12
V/ns
TO-220/TO-263
300
W
Power Dissipation
TO-220F/ TO-220F1
PD
48
W
TO-220F2
50
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
3. Starting TJ=25°C, ID=40A, VDD=37.5V
4. ISD≤80A, di/dt≤300A/µs, VDD≤BVDSS, TJ≤TJMAX
THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220/TO-263
TO-220F/ TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
0.5
2.6
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-097.F
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