RHRP8120 Ver la hoja de datos (PDF) - Thinki Semiconductor Co., Ltd.
Número de pieza
componentes Descripción
Fabricante
RHRP8120
Thinki Semiconductor Co., Ltd.
RHRP8120 Datasheet PDF : 3 Pages
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RHRP8120
®
20
16
TJ =125°C
12
8
4
TJ =25°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF（V）
Fig1. Forward Voltage Drop vs Forward Current
25
VR=600V
TJ =125°C
20
IF=20A
15
10
IF=10A
IF=5A
5
0
0
200 400 600 800 1000
diF/dt（A/μs）
Fig3. Reverse Recovery Current vs diF/dt
1.4
1.2
1.0
0.8
0.6
IRRM
0.4
0.2 trr
Qrr
0
0 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
350
300
VR=600V
TJ =125°C
250
IF=20A
200
150
IF=10A
100 IF=5A
50
0
0
200 400 600 800 1000
diF/dt（A/μs）
Fig2. Reverse Recovery Time vs diF/dt
1500
1200
VR=600V
TJ =125°C
IF=20A
900
600
IF=10A
IF=5A
300
0
0
200 400 600 800 1000
diF/dt（A/μs）
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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