LBC858BWT1G Ver la hoja de datos (PDF) - Leshan Radio Company

Número de pieza

componentes Descripción

Fabricante

LBC858BWT1G

General Purpose Transistors PNP Silicon

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G

1.0

0.7 D=0.5

0.5

0.2

0.3

0.2

0.1 0.05

0.1

0.07

0.05

0.03

0.02

0.01

0.1 0.2

0.5

SINGLE PULSE

SINGLE PULSE

P(pk)

t1

t2

DUTY CYCLE, D = t 1 /t 2

Z θJC (t) = r(t) R θJC

R θJC = 83.3°C/W MAX

Z θJA (t) = r(t) R θJA

R θJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t 1

T J(pk) – T C = P (pk) R θJC (t)

1.0 2.0

5.0 10 20

50 100 200

t, TIME (ms)

Figure 13. Thermal Response

500 1.0k 2.0k

5.0k 10k

–200

–100

–50

–10

–5.0

–2.0

–1.0

1s

3 ms

TA= 25°C TJ= 25°C

BC558

BC557

BC556

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

The safe operating area curves indicate I C –V CE limits of the

transistor that must be observed for reliable operation. Collector

load lines for specific circuits must fall below the limits indicated by

the applicable curve.

The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A

is variable depending upon conditions. Pulse curves are valid for

duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calcu-

lated from the data in Figure 13. At high case or ambient

temperatures, thermal limitations will reduce the power that can

be handled to values less than the limitations imposed by the sec-

ondary breakdown.

–0.5 –10

–30 –45 –65 –100

V CE , COLLECTOR–EMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

Rev.O 5/6

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