FDPF44N25T Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FDPF44N25T Datasheet PDF : 8 Pages
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FDPF44N25T
N-Channel UniFETTM MOSFET
250 V, 44 A, 69 m
Features
• RDS(on) = 69 m (Max.) @ VGS = 10 V, ID = 22 A
• Low Gate Charge (Typ.7 nC)
• Low Crss (Typ> 60 pF)
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
March 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
G
D
S
TO-220F
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/d
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
Power Dissipation (TC = 25C)
- Derate above 25C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2009 Fairchild Semiconductor Corporation
1
FDPF44N25T Rev. C0
S
FDPF44N25T
250
44*
26.4*
176*
30
2055
44
30.7
4.5
38
0.3
-55 to +150
300
FDPF44N25T
3.3
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Unit
C/W
C/W
www.fairchildsemi.com
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