DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2N7000-G Ver la hoja de datos (PDF) - Supertex Inc

Número de pieza
componentes Descripción
Fabricante
2N7000-G Datasheet PDF : 5 Pages
1 2 3 4 5
2N7000
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-Channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex 2N7000 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package
2N7000
2N7000-G
TO-92
-G indicates package is RoHS compliant (‘Green’)
BVDSS/BVDGS
(V)
60
RDS(ON)
(max)
(Ω)
5.0
ID(ON)
(min)
(mA)
75
Absolute Maximum Ratings
Parameter
Value
Drain to source voltage
Drain to gate voltage
Gate to source voltage
BVDSS
BV
DGS
±30V
Operating and storage temperature -55°C to +150°C
Soldering temperature1
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Notes:
1. Distance of 1.6mm from case for 10 seconds.
Pin Configuration
S GD
TO-92
(front view)

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]