FCPF190N60E-ND Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FCPF190N60E-ND
Fairchild Semiconductor
FCPF190N60E-ND Datasheet PDF : 10 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-100
*Notes:
1. VGS = 0V
2. ID = 10mA
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
for FCP190N60E
100
10μs
100μs
10
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
0.1
0.01
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
1
10
100
VDS, Drain to Source Voltage [V]
1000
Figure 11. Maximum Drain Current
vs. Case Temperature
25
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 10A
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 10. Maximum Safe Operating Area
for FCPF190N60E
100
10μs
10
100μs
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
0.01
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
1
10
100
VDS, Drain to Source Voltage [V]
1000
Figure 12. Eoss vs. Drain to Source Voltage
10
20
8
15
6
10
4
5
2
0
25
50
75
100
125
150
TC, Case Temperature [oC]
©2011 Fairchild Semiconductor Corporation
4
FCP190N60E / FCPF190N60E Rev. C10
0
0
100 200 300 400 500 600
V Drain to Source Voltage [V]
www.fairchildsemi.com
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