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SD211

N-Channel Lateral DMOS Switch - Zener Protected

Micross Components 

SD211 / 213 / 215

SD211DE / SD213DE / SD215DE N-Channel Lateral DMOS Switch - Zener Protected

Description:

The SD211DE / SD213DE / SD215DE are enhancement‐mode

MOSFETs designed for high speed low‐glitch switching in audio, video

and high‐frequency applications. The family is normally used for ±5V

analog switching or as a high speed driver of the SD214. These

MOSFETs utilize lateral construction to achieve low capacitance and

ultra‐fast switching speeds. An integrated Zener diode provides ESD

protection A poly‐silicon gate is featured for manufacturing reliability.

See SD5000 and SD54000 series for quad configurations.

For non‐zener protected versions see SD210DE / SD214DE series

Features:

ƒ Ultra‐High Speed Switching—tON: 1ns

ƒ Ultra‐Low Reverse Capacitance: 0.2pF

ƒ Low Guaranteed RDS @5V

ƒ Low Turn‐On Threshold Voltage (1.5V max)

ƒ N‐Channel Enhancement Mode

Benefits:

ƒ High‐Speed System Performance

ƒ Low Insertion Loss at High Frequencies

ƒ Low Transfer Signal Loss

ƒ Single Supply Operation & Simple Driver Requirement

Availability:

SD211DE / SD213DE / SD215DE – TO‐72 , ‐55°C to 125°C

SD211DE / SD213DE / SD215DE ‐ Bare die form

Contact Micross for full package dimensions

Pinout:

Top View

Applications:

ƒ Fast Analog Switching

ƒ Fast Sample & Holds

ƒ Pixel‐Rate Switching

ƒ DAC Deglitchers

ƒ High‐Speed Driver

MAXIMUM RATINGS

LIMIT IN VOLTS

MAXIMUM RATINGS

LIMIT

UNIT

SD211 SD213 SD215

(Continued)

Gate‐Drain, Gate‐Source Voltage ‐30/25 ‐15/25 ‐25/30

Drain Current

50

mA

Gate‐Substrate Voltage

‐0.3/25 ‐0.3/25 ‐0.3/30

Lead Temperature (1/16” from ease, 10s)

300

°C

Drain‐Source Voltage

30

10

20

Storage Temperature

‐65 to 150 °C

Source‐Drain Voltage

10

10

20

Operating Junction Temperature

‐55 to 125 °C

Drain ‐Substrate Voltage

30

15

25

Power Dissipation

Click To Buy Source‐Substrate Voltage

15

15

25

ELECTRICAL SPECIFICATION

TA = 25°C unless otherwise noted

SYMBOL

TEST CONDITIONS

Derate 3mW/C° above 25°C

300

LIMITS

TYP SD211DE

SD213DE

SD215DE

MIN MAX MIN MAX MIN MAX

mW

UNIT

DRAIN‐SOURCE BREAKDOWN

VOLTAGE

V(BR)DS

VGS = VBS = 0V, ID = 10µA 35 30

‐

‐

‐

‐

‐

VGS = VBS = ‐5V, ID = 10nA 30 10

‐

10

‐

20

‐

SOURCE‐DRAIN BREAKDOWN

V(BR)SD

VGD = VBD = ‐5V, IS = 10nA 22 10

‐

10

‐

20

‐

VOLTAGE

V

DRAIN‐SUBSTRATE BREAKDOWN

V(BR)DBO

VGB = 0V, ID = 10nA

35 15

‐

15

‐

25

‐

VOLTAGE

Source Open

SOURCE‐SUBSTRATE BREAKDOWN

VOLTAGE

V(BR)SBO

VGB = 0V, IS = 10µA

Drain Open

35 15

‐

15

‐

25

‐

DRAIN‐SOURCE LEAKAGE

SOURCE‐DRAIN LEAKAGE

GATE LEAKAGE

IDS(off)

VGS=VBS =‐5V VDS = 10V 0.4

‐

10

‐

10

‐

‐

VDS = 20V 0.9 ‐

‐

‐

‐

‐

10

ISD(off)

VGD =VBD=‐5V VSD = 10V 0.5

‐

10

‐

10

‐

‐

nA

VSD = 20V 1

‐

‐

‐

‐

‐

10

IGBS

VDB = VSB = 0V , VGB = 30V 0.01 ‐

100

‐

100

‐

100

THRESHOLD VOLTAGE

VGS(th)

VDS =VGS , ID = 1µA, VSB = 0V 0.8 0.5

1.5

0.1

1.5

0.1

1.5

V

VGS = 5V 58

‐

70

‐

70

‐

70

VGS = 10V 38

‐

45

‐

45

‐

45

DRAIN‐SOURCE‐ON RESISTANCE

RDS(on)

VSB = 0V

VGS = 15V 30

‐

‐

‐

‐

‐

‐

Ω

ID = 1mA VGS = 20V 26

‐

‐

‐

‐

‐

‐

VGS = 25V 24

‐

‐

‐

‐

‐

‐

FORWARD TRANSCONDUCTANCE

gfs

VDS = 10V , VSB = 0V

11 10

‐

10

‐

‐

10

mS

gos

ID = 20mA, f = 1kHz

0.9 ‐

‐

‐

‐

‐

9

GATE NODE CAPACITANCE

C(GS+GD+GB)

2.5 ‐

3.5

‐

3.5

‐

3.5

DRAIN NODE CAPACITANCE

C(GD+GB)

VDS = 10V , f = 1MHz

1.1 ‐

1.5

‐

1.5

‐

1.5

pF

SOURCE NODE CAPACITANCE

C(GS+SB)

VGS = VBS = ‐15V

3.7 ‐

5.5

‐

5.5

‐

5.5

REVERSE TRANSFER CAPACITANCE

Crss

0.2 ‐

0.5

‐

0.5

‐

0.5

TURN‐ON TIME

tD(on)

0.5 ‐

1

‐

1

‐

1

tr

VSB = 0V, VIN 0 to 5V,

0.6 ‐

1

‐

1

-

1

ns

TURN‐OFF TIME

tD(off)

RG = 25Ω, VDD = 5V RL =

2

‐

‐

‐

‐

-

-

This is trial version tf

680Ω

6

‐

‐

‐

‐

-

-

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents

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Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com

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