SD211DE Ver la hoja de datos (PDF) - Temic Semiconductors
Número de pieza
componentes Descripción
Fabricante
SD211DE Datasheet PDF : 6 Pages
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SD211DE/SST211 Series
Typical Characteristics
On-Resistance vs. Gate-Source Voltage
300
240
VGS = 4 V
180
120
5V
60
10 V
0
0
4
8
12
16
20
VSB – Body-Source Voltage (V)
On-Resistance vs. Temperature
100
ID = 5 mA, VBS = 0 V
80
VGS = 5 V
60
10 V
15 V
40
20 V
20
0
–60
–20
20
60
100 140
TA – Temperature (_C)
Threshold Voltage vs. Temperature
5
VGS = VDS = VTH
ID = 1 mA
4
3
2
1
0
–60
VBS = –10 V
–5 V
–1 V
–0.5 V
0V
–20
20
60
100
140
TA – Temperature (_C)
4
10 nA
1 nA
Leakage Current vs. Applied Voltage
ID (off) @ VGS = VBG = –5 V
IS(off) @ VGD = VBD = –5V
ISBO @ VGB = 0 V, Drain Open
100 pA
IS(off)
ISBO
ID(off)
10 pA
IGSS (Diode)
1 pA
0
4
8
12
16
20
Applied Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
20
VDS = 15 V
VBS = 0 V
16
TA = 55_C
12
25_C
8
125_C
4
0
1
10
100
ID – Drain Current (mA)
Output Conductance vs. Drain Current
1.0
VBS = 0 V
f = 1 kHz
0.8
VDS = 5 V
0.6
10 V
0.4
0.2
15 V
0
0
4
8
12
16
20
ID – Drain Current (mA)
Siliconix
S-51850—Rev. F, 14-Apr-97
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