SD211DE Ver la hoja de datos (PDF) - Temic Semiconductors
Número de pieza
componentes Descripción
Fabricante
SD211DE Datasheet PDF : 6 Pages
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SD211DE/SST211 Series
Specificationsa
Parameter
Dynamic
Forward
Transconductance
Gate Node
Capacitance
Drain Node
Capacitance
Source Node
Capacitance
Reverse Transfer
Capacitance
Switching
Turn-On Time
Turn-Off Time
Symbolb
Test Conditionsb
Limits
211 Series 213 Series 215 Series
Typc Min Max Min Max Min Max Unit
gfs
VDS = 10 V
VSB = 0 V
SD Series 11 10
SST Series 10.5 9
10
9
10
9
mS
gos
ID = 20 mA, f = 1 kHz
All
0.9
C(GS+GD+GB)
2.5
3.5
3.5
3.5
C(GD+DB)
VDS = 10 V
SD Series 1.1
1.5
1.5
1.5
C(GS+SB)
f = 1 MHz
VGS = VBS = –15 V
3.7
SST Series 4.2
5.5
5.5
5.5 pF
Crss
SD Series 0.2
0.5
0.5
0.5
td(on)
0.5
1
1
1
tr
SD Series Only
0.6
VSB = 0 V, VIN 0 to 5 V, RG = 25 W
1
1
1
ns
td(off)
VDD = 5 V, RL = 680 W
2
tf
6
Notes:
a. TA = 25_C unless otherwise noted.
b. B is the body (substrate), and (BR) is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
DMCBA
Siliconix
3
S-51850—Rev. F, 14-Apr-97
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