2N5909 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

2N5909

Monolithic Dual N-Channel JFET General Purpose Amplifier

New Jersey Semiconductor 

2N59O2-2N59O9

ELECTRICAL CHARACTERISTICS (Continued) (TA - 26-c unless otherwise specified)

Symbol

Parameter

Teat Condition*

IQSS

Gats Reverse Current

BVQSS Qate-Source Breakdown Voltage

Vastoff) Qate-Source Cutoff Voltage

VGs--20V,Vos-0

TA=125'C

IQ=-1MA.VDS-0

VD8-10V.ID-1nA

VQS

Gate Source Voltage

la

Gate Operating Current

VM-IOV, !D=30fiA

TA=126'C

loss Saturation Drain Current

Of.

Common-Source Forward

Transconductanca

f=1kHz

9o»

Common-Source Output Conductance VD8-10V,Vas-0

C*,

Common-Source Input Capacitance VDS"10V,VQS=0 f=1MHz

Cr«

Common-Source Reverse Transfer

(Note 1)

Capacitance

2NS902-5

Mln Max

-6

-10

-40

-0.6 -4.5

-4

-3

-3

30 600

70 250

6

3

1.6

2NG996-9

Mln Max

~i

~s

-40

-0.6 -4.5

—»

-1

-1

30 500

70 250

5

3

1.5

Units

PA

nA

V

pA

nA

,iA

f.3

PF

Bit

Common-Source Forward

Transconductance

VDQ=10V,lD*=30|iA f-1kHz

50 150 SO 150

MS

Bos

Common-Source Output Conductance

1

1

«n

Equivalent Short Circuit Input

Noise Voltage (Note 1)

Vos=10V, Vas=0

0.2

^V

0.1

IK

NF

Spot Nolsa Figure (Nota 1)

t= lOOHz

RO-IOMO

3

1 dB

NOTE 1i For design retennee only, not 100% tMted.

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