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Fabricante

IRF7413PBF-1

HEXFET® Power MOSFET

International Rectifier 

IRF7413PbF-1

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min Typ Max Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient

RDS(on)

VGS(th)

gfs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

IGSS

Gate-to-Source Reverse Leakage

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

RG

Gate Resistance

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

30 ––– ––– V VGS = 0V, ID = 250μA

–––

–––

–––

0.034 –––

––– 0.011

––– 0.018

V/°C Reference to 25°C, ID = 1mA

ff Ω

VGS = 10V, ID = 7.3A

VGS = 4.5V, ID = 3.7A

1.0 ––– 3.0 V VDS = VGS, ID = 250μA

10 ––– ––– S VDS = 10V, ID = 3.7A

––– ––– 12

––– ––– 25

μA

VDS = 30V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

–––

–––

––– -100

––– 100

nA

VGS = -20V

VGS = 20V

––– 52 79

ID = 7.3A

––– 6.1 9.2

––– 16 23

––– ––– 3.7

f nC VDS = 24V

VGS = 10V, See Fig. 6 and 9

Ω

––– 8.6 –––

VDD = 15V

––– 50 –––

––– 52 –––

––– 46 –––

––– 1800 –––

––– 680 –––

––– 240 –––

ID = 7.3A

f ns RG = 6.2 Ω

RG = 2.0Ω, See Fig. 10

VGS = 0V

pF VDS = 25V

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Symbol

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Ù Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Min. Typ. Max. Units

Conditions

––– ––– 3.1

––– ––– 58

––– ––– 1.0

––– 74 110

––– 200 300

MOSFET symbol

A showing the

integral reverse

e p-n junction diode.

V TJ = 25°C, IS = 7.3A, VGS = 0V

e ns TJ = 25°C, IF = 7.3A

nC di/dt = 100A/μs

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 9.8mH

RG = 25Ω, IAS =7.3A. (See Figure 12)

ƒ ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… Surface mounted on FR-4 board

† Rθ is measured at TJ approximately 90°C

2

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November 19, 2013

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