AON7410 Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

AON7410

30V N-Channel MOSFET

Unspecified 

Electrical Characteristics (TJ=25°C unless otherwise noted)

AON7410

30V N-Channel MOSFET

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1.4

ID(ON)

On state drain current

VGS=10V, VDS=5V

50

VGS=10V, ID=8A

RDS(ON) Static Drain-Source On-Resistance

TJ=125°C

VGS=4.5V, ID=7A

gFS

Forward Transconductance

VDS=5V, ID=8A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

V

1

µA

5

±100 nA

1.8 2.5

V

A

16

20

24

29

mΩ

21

26

30

S

0.75 1

V

20

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

440 550 660 pF

77 110 143 pF

33

55

77

pF

3

4

4.9

Ω

SWITCHING PARAMETERS

Qg (10V) Total Gate Charge

Qg (4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=15V, ID=8A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

VGS=10V, VDS=15V, RL=2Ω,

tD(off)

Turn-Off DelayTime

RGEN=3Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs

Qrr

Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs

7.8 9.8 12 nC

3.6 4.6 5.5 nC

1.4 1.8 2.2 nC

1.3 2.2

3

nC

5

ns

3.2

ns

24

ns

6

ns

7

9

11

ns

12

15

18

nC

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

Power dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. 150

E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA

curve provides a single pulse rating.

Rev11: Jul-2011

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

2/6

www.freescale.net.cn

Share Link: