2SB562 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SB562

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SB562 TRANSISTOR (PNP)

FEATURES

z Low frequency power amplifier

z Complementary pair with 2SD468

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO

Collector-Base Breakdown Voltage

-25

VCEO

Collector-Emitter Breakdown Voltage

-20

VEBO

Emitter-Base Breakdown Voltage

-5

IC

Collector Current -Continuous

-1

PC

Collector Dissipation

625

RθJA

Thermal Resistance from Junction to Ambient

200

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55~+150

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

V(BR)CBO IC=-10μA,IE=0

V(BR)CEO IC=-1mA,IB=0

Emitter-base breakdown voltage

V(BR)EBO IE=-10μA,IC=0

Collector cut-off current

ICBO

VCB=-20V,IE=0

Emitter cut-off current

IEBO

VEB=-4V,IC=0

DC current gain

hFE

VCE=-2V,IC=-0.5A

Collector-emitter saturation voltage

Base-emitter voltage

VCE(sat) IC=-0.8A,IB=-0.08A

VBE

VCE=-2V,IC=-0.5A

Transition frequency

fT

VCE=-2V,IC=-0.5A

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

Unit

V

V

V

A

mW

℃/W

℃

℃

Min

Typ Max Unit

-25

V

-20

V

-5

V

-1

µA

-1

µA

85

240

-0.5 V

-1

V

350

MHz

38

pF

CLASSIFICATIONOF hFE

Rank

Range

www.cj-elec.com

B

85-170

1

C

120-240

C,Dec,2015

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