2SB562 Ver la hoja de datos (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Número de pieza

componentes Descripción

Fabricante

2SB562

TRANSISTOR (PNP)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SB562

2SB562 TRANSISTOR (PNP)

D FEATURES

Power dissipation

T PCM:

900 mW (Tamb=25℃)

.,L Collector current

ICM:

-1 A

Collector-base voltage

O V(BR)CBO:

-25 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

TO-92L

1. EMITTER

2. COLLECTOR

3. BASE

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

N Parameter

Collector-base breakdown voltage

O Collector-emitter breakdown voltage

R Emitter-base breakdown voltage

T Collector cut-off current

C Emitter cut-off current

DC current gain

E Collector-emitter saturation voltage

L Base-emitter voltage

E Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

VCE(sat)

VBE

fT

Cob

Test conditions

Ic=-10µA, IE=0

Ic=-1mA, IB=0

IE=-10µA, IC=0

VCB=-20V, IE=0

VEB=-4V, IC=0

VCE=-2V, IC=-0.5A

IC=-0.8A, IB=-0.08A

VCE=-2V, IC=-0.5A

VCE=-2V, IC=-0.5A

VCB=-10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-25

V

-20

V

-5

V

-1

µA

-1

µA

85

240

-0.5 V

-1

V

350

MHz

38

pF

EJ CLASSIFICATION OF hFE(1)

Rank

WRange

B

85-170

C

120-240

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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