2SA1962 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SA1962 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1962
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-230
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB=B -0.8A
VBE(on)
Base-Emitter On Voltage
IC= -7A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -230V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-3.0 V
-1.5 V
-5 μA
-5 μA
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
55
160
hFE-2
DC Current Gain
IC= -7A ; VCE= -5V
35
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
360
pF
30
MHz
hFE-1 Classifications
R
O
55-110 80-160
isc Website：www.iscsemi.cn
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