2SA1962 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SA1962 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1962
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -230V(Min)
·Good Linearity of hFE
·Complement to Type 2SC5242
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-1.5
A
130
W
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn
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