2SB1308 Ver la hoja de datos (PDF) - KEXIN Industrial

Número de pieza

componentes Descripción

Fabricante

2SB1308

PNP Transistors

KEXIN Industrial 

SMD Type

PNP Transistors

2SB1308

Transistors

■ Features

● Power Transistor

● Excellent DC current Gain

● Low Collector-emitter Saturation Voltage

1.70 0.1

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature range

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

TJ

Tstg

Rating

-30

-20

-6

-3

500

250

150

-55 to 150

Unit

V

A

mW

℃/W

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= -100 uA， IE=0

VCEO Ic= -1 mA, IB=0

VEBO IE= -100 uA， IC=0

ICBO VCB= -25V , IE=0

IEBO VEB= -5V , IC=0

VCE(sat) IC=-1.5 A, IB=-150 mA

VBE(sat) IC=-1.5 A, IB=-150 mA

hFE VCE= -2V, IC= -500 mA

Cob VCB= -20V, IE= 0,f=1MHz

fT

VCE= -6V, IC= -50 mA,f=30MHz

■ Classification of hfe

Type

Range

Marking

2SB1308-P

82-180

BF P*

2SB1308-Q

120-270

BF Q*

2SB1308-R

180-390

BF R*

Min Typ Max Unit

-30

-20

V

-6

-0.5

uA

-0.5

-0.45

V

-1.2

82

390

60

pF

120

MHz

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