2SD1163 Ver la hoja de datos (PDF) - Thinki Semiconductor Co., Ltd.
Número de pieza
componentes Descripción
Fabricante
2SD1163 Datasheet PDF : 2 Pages
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2SD1163/2SD1163A
®
2SD1163/2SD1163A
Pb
Pb Free Plating Product
NPN Silicon Epitaxial Power Transistor
FEATURES:
* Medium Power Linear Switching Applications
* Low collector saturation voltage
TV horizontal deflection output
9.90±0.20
φ3.60±0.20
4.50±0.20
1.30±0.20
COLLECTOR
2
BASE
1
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
1.27±0.20
1.52±0.20
2.40±0.20
1 23
TO-220C
2.54typ
2.54typ
Package Dimension
0.80±0.20
0.50±0.20
Dimensions in Millimeters
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD1163
2SD1163A
Open emitter
VCEO
Collector-emitter voltage
2SD1163
2SD1163A
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
IC(surge)
PC
Collector current-surge
Collector power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
300
350
120
150
6
7
10
20
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
© 2006 Thinki Semiconductor Co.,Ltd.
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