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STK10C68-P30 Ver la hoja de datos (PDF) - Simtek Corporation

Número de pieza
componentes Descripción
Fabricante
STK10C68-P30 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STK10C68
READ CYCLES #1 & #2
SYMBOLS
NO.
#1, #2
Alt.
PARAMETER
STK10C68-25
MIN MAX
1
tELQV
2
tAVAVg
3
tAVQVh
tACS
tRC
tAA
Chip Enable Access Time
Read Cycle Time
Address Access Time
25
25
25
4
tGLQV
tOE Output Enable to Data Valid
12
5
tAXQX
tOH Output Hold After Address Change 5
6
tELQX
7
tEHQZi
tLZ
Chip Enable to Output Active
tHZ Chip Disable to Output Inactive
5
13
8
tGLQX
tOLZ Output Enable to Output Active
0
9
tGHQZi
tOHZ Output Disable to Output Inactive
13
10
tELICCHe
tPA Chip Enable to Power Active
0
11
tEHICCLc,e
tPS
Chip Disable to Power Standby
25
11A
tWHQV
tWR Write Recovery Time
30
STK10C68-30
MIN MAX
30
30
30
15
5
5
15
0
15
0
30
35
(VCC = 5.0V ± 10%)
STK10C68-35
MIN MAX
STK10C68-45
MIN MAX
UNITS
35
45
ns
35
45
ns
35
45
ns
20
25
ns
5
5
ns
5
5
ns
17
20
ns
0
0
ns
17
20
ns
0
0
ns
35
45
ns
45
55
ns
Note c: Bringing E high will not produce standby currents until any nonvolatile cycle in progress has timed out. See MODE SELECTION table.
Note e: Parameter guaranteed but not tested.
Note f: NE must be high during entire cycle.
Note g: For READ CYCLE #1 and #2, W and NE must be high for entire cycle.
Note h: Device is continuously selected with E low and G low.
Note i: Measured ± 200mV from steady state output voltage.
READ CYCLE #1 f,g,h
ADDRESS
DQ (Data Out)
5
tAXQX
2
tAVAV
3
tAVQV
DATA VALID
W
READ CYCLE #2 f,g
ADDRESS
E
G
DQ (Data Out)
ACTIVE
ICC
STANDBY
11A
tWHQV
10
tELICCH
2
tAVAV
6
tELQX
1
tELQV
4
tGLQV
8
tGLQX
11
tEHICCL
7
tEHQZ
9
tGHQZ
DATA VALID
W
11A
tWHQV
4-3

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