KDV239E Ver la hoja de datos (PDF) - KEC
Número de pieza
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KDV239E Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF RADIO.
FEATURES
ᴌUltra Low Series Resistance : rS=0.44ή(Typ.)
ᴌSmall Package. (ESC Package)
KDV239E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
E
1
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
15
150
-55ᴕ150
UNIT
V
ᴱ
ᴱ
2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C2V
C10V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION
IR=1ỌA
VR=15V
VR=2V, f=1MHz
VR=10V, f=1MHz
C2V/C10V, f=1MHz
VR=1V, f=470MHz
MIN.
15
-
3.8
1.5
2.0
-
TYP.
-
-
4.25
1.75
2.4
0.44
MAX.
-
3
4.7
2.0
-
0.6
UNIT
V
nA
pF
ή
Marking
Type Name
UJ
2000. 3. 7
Revision No : 0
1/2
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