BPX61 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BPX61

Silicon PIN Photodiode

Siemens AG 

BPX 61

Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)

Characteristics (TA = 25 °C, standard light A, T = 2856 K)

Bezeichnung

Description

Spektrale Fotoempfindlichkeit, λ = 850 nm

Spectral sensitivity

Quantenausbeute, λ = 850 nm

Quantum yield

Leerlaufspannung, Ev = 1000 Ix

Open-circuit voltage

Kurzschlußstrom, Ev = 1000 Ix

Short-circuit current

Anstiegs- und Abfallzeit des Fotostromes

Rise and fall time of the photocurrent

RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA

Durchlaßspannung, IF = 100 mA, E = 0

Forward voltage

Kapazität, VR = 0 V, f = 1 MHz, E = 0

Capacitance

Temperaturkoeffizient von VO

Temperature coefficient of VO

Temperaturkoeffizient von ISC

Temperature coefficient of ISC

Rauschäquivalente Strahlungsleistung

Noise equivalent power

VR = 10 V, λ = 850 nm

Nachweisgrenze, VR = 10 V, λ = 850 nm

Detection limit

Symbol

Symbol

Sλ

η

VO

ISC

tr, tf

VF

C0

TCV

TCI

NEP

D*

Wert

Value

0.62

0.90

375 (≥ 320)

70

20

Einheit

Unit

A/W

Electrons

Photon

mV

µA

ns

1.3

72

– 2.6

0.18

4.1 × 10–14

6.6 × 1012

V

pF

mV/K

%/K

W

√Hz

cm · √Hz

W

Semiconductor Group

359

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