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PUMB18 Datasheet PDF : 11 Pages
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Philips Semiconductors
PEMB18; PUMB18
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = −50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = −30 V; IB = 0 A
VCE = −30 V; IB = 0 A;
Tj = 150 °C
VEB = −5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = −5 V; IC = −10 mA
IC = −10 mA; IB = −0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = −5 V; IC = −100 µA
VCE = −0.3 V; IC = −20 mA
R2/R1
bias resistor ratio
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min
Typ
Max
Unit
-
-
−100
nA
-
-
−1
µA
-
-
−50
µA
-
-
−600
µA
50
-
-
-
-
−150
mV
-
−0.9
−0.3
V
−2.5
−1.5
-
V
3.3
4.7
6.1
kΩ
1.7
2.1
2.6
-
-
3
pF
9397 750 14371
Product data sheet
Rev. 02 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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