STP7NB60FP_98 Ver la hoja de datos (PDF) - STMicroelectronics
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STP7NB60FP_98 Datasheet PDF : 9 Pages
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STP7NB60/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
P a ram et er
Turn-on Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 3.6 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 7.2 A VGS = 10 V
Min.
Typ .
18
8
30
9.9
13.3
M a x.
27
12
45
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vo f f)
tf
tc
P a ram et er
Off-voltage Rise Time
Fall Time
Cross-over T ime
Test Conditions
VDD = 480 V ID = 7.2 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ .
8
5
15
M a x.
12
8
23
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
P a ram et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 7. 2 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
ISD = 7.2 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 o C
(see test circuit, figure 5)
Charge
IRRM Reverse Recovery
Cu r re nt
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
M a x.
7.2
28.8
Unit
A
A
1.6
V
530
ns
4.5
µC
17
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
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