STPS1150(2006) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
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Fabricante
STPS1150 Datasheet PDF : 7 Pages
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STPS1150
Characteristics
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
Non repetitive surge peak
forward current versus overload
duration - maximum values (SMA)
IM(A)
8
SMA
7
6
5
4
3
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=25°C
Ta=75°C
Ta=125°C
1.E+00
Figure 6.
Non repetitive surge peak forward
current versus overload duration
- maximum values (DO-41)
IM(A)
8
7
DO-41
6
Ta=25°C
5
Ta=75°C
4
3
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=125°C
1.E+00
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration - epoxy
printed circuit board, eCu = 35 µm,
recommended pad layout (SMA)
Figure 8.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DO-41)
Zth(j-a)/Rth(j-a)
1.0
SMA
0.9
0.8
0.7
0.6 δ = 0.5
0.5
0.4
0.3 δ = 0.2
0.2 δ = 0.1
0.1
0.0
1.E-02
Single pulse
1.E-01
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Zth(j-a)/Rth(j-a)
1.0
DO-41
0.9
0.8
0.7
0.6 δ = 0.5
0.5
0.4
0.3 δ = 0.2
0.2 δ = 0.1
0.1
0.0
1.E-02
Single pulse
1.E-01
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
3/7
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