STPS1150(2006) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS1150 Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS1150
Table 2.
Symbol
Thermal resistance
Parameter
Rth(j-l) Junction to lead
Lead length = 10 mm
SMA
DO-41
Value
20
30
Unit
° C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min. Typ Max.
Unit
IR (1) Reverse leakage current
VF (2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
VR = VRRM
IF = 1 A
IF = 2 A
0.2 1.0
µA
0.2 1.0
mA
0.78 0.82
0.62 0.67
V
0.85 0.89
0.69 0.75
1. tp = 5 ms, δ < 2%
2. tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.59 x IF(AV) + 0.08 IF2(RMS)
Figure 1.
Average forward power
dissipation versus average
forward current
PF(AV)(W)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.2
δ = 0.05
δ = 0.1 δ = 0.2 δ = 0.5
δ=1
IF(AV)(A)
0.4
0.6
0.8
T
δ=tp/T
1.0
tp
1.2
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
IF(AV)(A)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
T
δ=tp/T
25
tp
50
Rth(j-a)=Rth(j-I)
Rth(j-a)=120°C/W
SMA
DO-41
Tamb(°C)
75
100
125
150
175
2/7
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