MBR1045CT Ver la hoja de datos (PDF) - Diode Semiconductor Korea
Número de pieza
componentes Descripción
Fabricante
MBR1045CT Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
MBR1020CT - - - MBR1060CT
FIG.1 -- FORWARD CURRENT DERATING CURVE
12.5
10
7.5
5.0
2.5
0
0
Resistive or inductive Load
50
100
150
CASE TEMPERATURE
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
11111vCHARACTERISTIC PERLEG
40
10
TJ=125
1
Pulse Width=300µs
1% Duty Cycle
TJ=25
0.1
MBR1020CT-MBR1045CT
0.01
MBR1050CT&MBR1060CT
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.11.2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK
cc
FORWARD SURGE CURRENT PERLEG
150
125
TJ=TJmax.
8.3ms Single Half Sine Wave
(JEDEC Method)
100
75
50
25
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
bn
111
40
10
TJ=125
1
TJ=75
0.1
0.01
0.0010
MBR1020CT-MBR1045CT
MBR1050CT&MBR1060CT
20
40
60
TJ=25
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
1FIG.5--TYPICAL JUNCTION CAPACITANCE PERLEG
4000
1000
TJ=25
f=1.0MHz
Vsig=50MVp-p
100
MBR1020CT-MBR1045CT
100.1
MBR1050CT&MBR1060CT
1
10
100
REVERSE VOLTAGE,VOLTS
FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE
PERLEG cc
c
100
10
1
0.1
0.01
0.1
1
10
100
PULSE DURATON,Sec.
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