MBR120P Ver la hoja de datos (PDF) - New Jersey Semiconductor
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MBR120P Datasheet PDF : 2 Pages
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1N5817, 1N5818, 1N5819, MBR115P, MBR120P, MBR130P, MBR140P
NOTE 1 - DETERMINING MAXIMUM RATINGS
Reverie power dissipation end the ponibility of thermal
runaway mun be considered when operating this rectifier *t
reverse voltages above 0.1 VRWM- Proper derating may be accom-
plished by uie of equation (1).
slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is
basad upon dc conditions. For use in common rectifier circuits,
Table 1 indicates suggested factors for an equivalent dc voltage
to use for conservative design, that is:
TA(max) • Tjlmaxl ~ RflJAfplAVI - RejApR(AV) I1'
where TAlmax) " Maximum allowable ambient temperature
Tj(max) * Maximum allowable junction temperature
(12S°C or the temperature at which thermal
runaway occurs, whichever is lowest)
PFIAV) ' Average forward power dissipation
PR (A VI • Average reverse power dissipation
RJJA • Junction-to-ambient thermal resistance
Figures 1, 2. and 3 permit easier use of equation (1) by taking
reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature as determined by
equation (2).
TR-Tj(max)-R9jAPR(AV)
(2)
Substituting equation (2) into equation (1} yields:
TA(max) " TR- R(?JAPF(AV)
'31
Inspection of equations (2) and (3) reveals that TR is the
ambient temperature at which thermal runaway occurs or where
Tj - 125°C, when forward power is zero. The transition from one
boundary condition to the other is evident on the curves of
Figures 1, 2. and 3 as a difference in the rate of change of the
VR(equiv)-Vin(PK) * F
(41
The factor P is derived by considering the properties of the various
rectifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: Find TA(max) for 1N5818 operated in a 12-volt
dc supply using a bridge circuit with capacitive filter such that
IDC " 0-4 A (IFIAV) • °-5 A), IIFMI/IIAVI " 1". input voltage
•10V|rml),R,,jA-800C/W.
Step 1. Find Vp|(,quiv| Read F • 0.65 from Table 1.
•'•VRiaquJ,)-(1.41)1101 (0.65) -9.2V.
Step 2. Find Tfj from Figure 2. Read TR - 109°C
<5> VR • 9.2 V and R8JA • 80°C/W.
Step 3. Find Pp(Ay| from Figure 4. ""Read Pp(AV) - 0 . 5 W
®>{j~Jj-10andlF|AVI-0.5A.
Step 4. Find TA(max) from equation (31.
TA(max) " 109 - (80H0.5I - 69°C.
""Values given are for the 1N5818. Power is slightly lower for the
1N5817 because of its lower forward voltage, and higher for the
1N5819. Variations will be similar for the MBR-prefix devices,
using Pp(AV) from Figure 7.
TABLE 1- VALUES FOR FACTOR F
Circuit
Load
Half Wave
Resistive Capacilivt*
Full Wave,
Bridge
Resistive Capacitive
Full Wave,
Center Tapped* t
Resistive Capacitive
Sine Wave
O.S
1.3
0.5
0.65
1,0
1.3
Square Wave
0.75
1.S
0.75
0.75
1.5
1.5
•Note that VR(PK) « 2.0 Vjn(pK). tUs« line to center tap voltage for V|n.
FIGURE 1- MAXIMUM REFERENCE TEMPERATURE
1N5817/MBR11EP/MBR120P
FIGURE 2 - MAXIMUM REFERENCE TEMPERATURE
1N5818/MBR130P
125
3.0 M 5.0
7.0
W
VR, DC REVERSE VOLTAOE(VOLTS)
FIGURE 3 - MAXIMUM REFERENCE TEMMRATUR,
1N5819/MBR140F
4.0 S.O
7.0
10
16
20
VR, DC REVERSE VOLTAGE (VOLTS)
75
4.0 6.0
7,0
10
16
20
30
VR, DC REVERSE VOLTAGE(VOLTS)
FIGURE 4 - STEADV-STATE THERMAL RESISTANCE
90
10
-IOTH LEADS TDHEAT INK
EQUAL 1ENGTM
70
^
80
^ _^
MAX MUM
^*^ ^
50
40
S*"^
^f
***~
^ •^"TY •I^ CAL
^
30
w
^^
•"^. ^
U
*
I/I 1/4 3/1 I/J I/I 3/4 7/1 1.
L, LEAD LEK9TM (INCHED
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