DB101 Ver la hoja de datos (PDF) - Mospec Semiconductor
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DB101 Datasheet PDF : 2 Pages
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MOSPEC
SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts
CURRENT
1.0 Ampere
FEATURES
＊Glass Passivated chip junction
＊High forward surge current capability
＊Ideal for printed circuit board
＊High temperature soldering guaranteed:
260oc/10 second at 5 lbs. (2.3kg) tension
MECHANICAL DATA
＊Case: Transfer molded plastic
＊Epoxy: UL94V-O rate flame retardant
＊Terminals：Lead Solderable Per MIL-STD-202
method 208
＊Polarity：As Marking on Body
＊Mounting Position: Any
＊Weight： 0.04 ounce, 1.0 gram
DB101 THRU DB107
MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS
* Rating at 25℃ ambient temperature unless otherwise specified
* Single phase,half wave. 60Hz, resistive or inductive load.
* For capacitive load derate current bh 20 %
Characteristic
Symbol DB101 DB102 DB103 DB104 DB105 DB106 DB107
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM 50 100 200 400 600 800 1000
VR
Unit
V
RMS Reverse Voltage
VR(RMS)
35
Average Rectifier Forward Current
(Note 1)
@ TA=50℃
Non-Repetitive Peak Surge Current
8.3 ms Single half sine-wave superimposed on
rated load ( JEDEC Method)
Forward Voltage (per element) ( IF =1.0 Amp)
Peak Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
Rating for Fusing( t<8.3 ms)
Typical Junction Capacitance per element (Note2)
IO(AV)
IFSM
VFM
IR
I2t
CJ
Typical Thermal Resistance (note 3)
Operating and Storage Temperature Range
Rθ jA
TJ , Tstg
70 140 280 420 560 700
V
1.0
A
50
A
1.1
V
5.0
uA
500
10
A2s
25
pF
40
k/W
-65 to +150
℃
Note: 1 Lead maintained at ambient temperature at a distance of 9.5 mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to ambient, mounted on PC board with 12 mm2 copper pad.
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