MMBT5551(2007) Ver la hoja de datos (PDF) - Diotec Semiconductor Germany

Número de pieza

componentes Descripción

Fabricante

MMBT5551
(Rev.:2007)

Surface Mount General Purpose Si-Epi-Planar Transistors

Diotec Semiconductor Germany  

MMBT5551

Characteristics (Tj = 25°C)

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)

IC = 10 mA, IB = 1 mA

MMBT5551 VBEsat

IC = 50 mA, IB = 5 mA

MMBT5551 VBEsat

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 120 V, (E open)

MMBT5551 ICBO

VCB = 120 V, Tj = 100°C, (E open)

MMBT5551 ICBO

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 4 V, (C open)

IEBO

Gain-Bandwidth Product – Transitfrequenz

IC = 10 mA, VCE = 10 V, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

Noise figure – Rauschzahl

VCE = 5 V, IC = 200 µA, RG = 2 kΩ,

f = 30 Hz ... 15 kHz

MMBT5551 F

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Marking - Stempelung

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

–

1.0 V

–

–

1.0 V

–

–

50 nA

–

–

50 µA

–

–

50 nA

100 MHz

–

300 MHz

–

–

6 pF

–

–

30 pf

–

–

8 dB

< 420 K/W 1)

MMBT5401

MMBT5551 = 3S

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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