MMBT5551 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
MMBT5551 Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Between Emitter-Base
260
I C = 1.0 mA
240
220
200
180
160
0.1
1
10
100
1000
RESISTANCE (kΩ)
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance between Emitter-Base
700
600
500
400 SOT-23
300
200
100
0
0
25
TO-92
50
75
100
125
150
TEMPERATURE (oC)
Figure 9. Power Dissipation vs. Ambient
Temperature
vs Collector Current
16
FREG = 20 MHz
V CE = 10V
12
8
4
0
1
10
50
I C - COLLECTOR CURRENT (mA)
Figure 8. Small Signal Current Gain vs. Collector
Current
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551 Rev. 1.1.0
5
www.fairchildsemi.com
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