2N5551 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

2N5551

NPN General Purpose Amplifier

Fairchild Semiconductor 

Electrical Characteristics(4)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Test Condition

Min. Max. Units

Off Characteristics

V(BR)CEO

V(BR)CBO

V(BR)EBO

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

ICBO Collector Cut-Off Current

IEBO Emitter Cut-Off Current

On Characteristics

IC = 1.0 mA, IB = 0

IC = 100 μA, IE = 0

IE = 10 μA, IC = 0

VCB = 120 V, IE = 0

VCB = 120 V, IE = 0, TA = 100°C

VEB = 4.0 V, IC = 0

160

V

180

V

6.0

V

50

nA

50

μA

50

nA

hFE DC Current Gain

VCE(sat) Collector-Emitter Saturation Voltage

VBE(sat) Base-Emitter On Voltage

Small-Signal Characteristics

IC = 1.0 mA, VCE = 5.0 V

IC = 10 mA, VCE = 5.0 V

IC = 50 mA, VCE = 5.0 V

IC = 10 mA, IB = 1.0 mA

IC = 50 mA, IB = 5.0 mA

IC = 10 mA, IB = 1.0 mA

IC = 50 mA, IB = 5.0 mA

80

80

250

30

0.15

V

0.20

V

1.0

V

1.0

V

fT

Current Gain Bandwidth Product

IC = 10 mA, VCE = 10 V,

f = 100 MHz

100

MHz

Cobo Output Capacitance

VCB = 10 V, IE = 0, f = 1.0 MHz

6.0

pF

Cibo Input Capacitance

VBE = 0.5 V, IC = 0, f = 1.0 MHz

20

pF

Hfe Small-Signal Current Gain

IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 50

250

NF Noise Figure

IC = 250 μA, VCE= 5.0 V,

RS=1.0 kΩ, f=10 Hz to 15.7 kHz

8.0

dB

Note:

4. PCB board size FR-4 76 x 114 x 0.6 T mm3 (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size.

© 2009 Fairchild Semiconductor Corporation

2N5551 / MMBT5551 Rev. 1.1.0

3

www.fairchildsemi.com

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