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SK1010

10.0 Ampere Surface Mount Round Lead Schottky Barrier Rectifier Diodes

Thinki Semiconductor Co., Ltd. 

SK1035 thru SK1020

SK1035 thru SK1020

Pb

Pb Free Plating Product

10.0 Ampere Surface Mount Round Lead Schottky Barrier Rectifier Diodes

FEATURE

Standard MBR matured technology with high reliablity

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

For surface mounted applications

Low reverse leakage

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds at terminals

MECHANICAL DATA

Case: HSMC/SMC-W Package

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode band

Mounting Position: Any

Weight: 0.22 gram approximately

APPLICATION

LED SMPS/Industrial power supply

HID ballast stabilizer

Telecommunication SMPS/LED street lamp

OUTLINE

H

Unit:inch(millimeter)

Cathode Band

J

A

C

E

F

G

D

B

DIMENSIONS

INCHES

DIM

MIN

MAX

A

0.200

0.214

B

0.177

0.203

C

0.002

0.005

D

---

0.02

E

0.047

0.056

F

0 .168

0 .179

G

0.309

0.322

H

0.239

0.243

J

0.234

0.240

MM

MIN

5.08

4.70

0.05

---

1.20

4.27

7.85

6.08

5.95

MAX

5.43

5.30

0.13

0.51

1.42

4.55

8.18

6.18

6.10

HSMC/SMC-W

NOTE

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

PARAMETER

SK

SK

SK

SYMBOL

1035 1045 105

SK

106

SK

109

SK

1010

Maximum repetitive peak reverse voltage

VRRM

35

45

50

60

90

100

Maximum RMS voltage

VRMS

24

31

35

42

63

70

Maximum DC blocking voltage

VDC

35

45

50

60

90

100

Maximum average forward rectified current

IF(AV)

10

Peak repetitive forward current

(Rated VR, Square Wave, 20KHz)

IFRM

20

SK

1015

150

105

150

SK

1020

200

140

200

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

IFSM

Peak repetitive reverse surge current (Note 1)

Maximum instantaneous forward voltage (Note 2)

IF=10A, TJ=25℃

IF=10A, TJ=125℃

IRRM

1.0

VF

0.70

0.57

Maximum reverse current @ rated VR TJ=25 ℃

TJ=125 ℃

IR

15

Voltage rate of change (Rated VR)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: tp = 2.0 μs, 1.0KHz

dV/dt

RθJC

TJ

TSTG

Note 2: Pulse test with PW=300μs, 1% duty cycle

150

0.5

0.80

0.85

1.05

0.70

0.71

-

0.1

10

6

10000

17

- 55 to +150

- 55 to +175

UNIT

V

V

V

A

A

A

A

V

mA

V/μs

oC/W

oC

oC

Rev.07C

© 2006 Thinki Semiconductor Co., Ltd.

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