MUN5211DW1(2012) Ver la hoja de datos (PDF) - ON Semiconductor
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MUN5211DW1 Datasheet PDF : 8 Pages
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MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5211DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25C
Derate above 25C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5211DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBC114EDXV6 (SOT−563) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25C
Derate above 25C
PD
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBC114EDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
PD
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
NSBC114EDP6 (SOT−963) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25C
Derate above 25C
PD
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
NSBC114EDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
PD
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Max
187
256
1.5
2.0
670
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
357
2.9
350
500
4.0
250
−55 to +150
231
269
1.9
2.2
540
464
339
408
2.7
3.3
369
306
−55 to +150
Unit
mW
mW/C
C/W
mW
mW/C
C/W
C/W
C
mW
mW/C
C/W
mW
mW/C
C/W
C
MW
mW/C
C/W
MW
mW/C
C/W
C
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