IRF7811AV(2003) Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
IRF7811AV Datasheet PDF : 6 Pages
| |||
2.0 ID = 15A
1.5
1.0
0.5
6 ID = 15A
VDS = 16V
4
IRF7811AV
2
V GS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T J, Junction Temperature
( °C)
0
0
5
10
15
20
QG , Total Gate Charge (nC)
Figure 1. Normalized On-Resistance vs. Temperature
0.020
0.018
ID = 15A
0.016
0.014
Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge
3000
2500
2000
1500
Ciss
V GS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
0.012
1000
0.010
0.008
3.0
6.0
9.0
12.0
15.0
V GS, Gate -to -Source Voltage (V)
Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage
500
Crss
0
1
10
100
V DS , Drain-to-Source Voltage (V)
Figure 4. Typical Capacitance vs. Drain-to-Source Voltage
100
100
TJ = 150 °C
10
TJ = 25 °C
1
TJ = 150 °C
10
1
TJ = 25 °C
0.1
2.0
V DS= 15V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
4.5
5.0
V GS, Gate-to-Source Voltage (V)
Figure 5. Typical Transfer Characteristics
www.irf.com
0.1
0.3
V GS= 0 V
0.6
0.9
1.2
1.5
V SD,Source-to-Drain Voltage (V)
Figure 6. Typical Source-Drain Diode Forward Voltage
3
Share Link: 