RB521S-30 Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Número de pieza
componentes Descripción
Fabricante
RB521S-30 Datasheet PDF : 4 Pages
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Typical Characteristics
Forward Characteristics
1000
100
10
oC
=100
Ta
1
0.1
0.01
0
100
200
300
400
500
600
FORWARD VOLTAGE V (mV)
F
Reverse Characteristics
1000
100
T =100 oC
a
10
T =25 oC
a
1
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE V (V)
R
100
30
10
3
1
0
Capacitance Characteristics
T =25℃
a
f=1MHz
5
10
15
20
REVERSE VOLTAGE V (V)
R
180
150
120
90
60
30
0
0
Power Derating Curve
25
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
High Diode Semiconductor
2
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