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RB521S-30 Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd

Número de pieza
componentes Descripción
Fabricante
RB521S-30
HDSEMI
Jiangsu High diode Semiconductor Co., Ltd HDSEMI
RB521S-30 Datasheet PDF : 4 Pages
1 2 3 4
RB521S-30
SOD523 Plastic-Encapsulate Diodes
Schottky Rectifier
Features
Small surface mounting type
Low reverse current and low forward voltage
High reliability
Applications
Rectifier
Marking
C
SOD523
Parameter
DC reverse voltage
Mean rectifying current
Non-repetitive Peak forward surge current @ t=8.3ms
Power dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
VR
IO
IFSM
PD
RθJA
Tj
Tstg
Limit
30
200
1
150
667
125
-55~+150
Unit
V
mA
A
mW
/W
Electrical CharacteristicsTa=25Unless otherwise specified
Parameter
Symbol Min
Typ
Max Unit
Forward voltage
Reverse current
VF1
0.35
V
VF2
0.5
V
IR
30
μA
Conditions
IF=10mA
IF=200mA
VR=10V
High Diode Semiconductor
1

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