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DTA123EL-AL3-6-R

DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS)

Unisonic Technologies 

DTA123E

PNP EPITAXIAL SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

V

Input Voltage

VIN

-12 ~ +10

V

Output Current

IOUT

-100

mA

Power Dissipation

SOT-523

150

mW

SOT-23/SOT-323 PD

200

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL SPECIFICATIONS (Ta=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Voltage

VIN(OFF) VCC =-5V, IOUT =-100µA

VIN(ON) VOUT =-0.3V, IOUT =-20mA

Output Voltage

VOUT(ON) IOUT/IIN =10mA/-0.5mA

Input Current

IIN

VIN=-5V

Output Current

IOUT(OFF) VCC =-50V, VIN =0V

DC Current Gain

GIN VOUT =-5V, IOUT =-20mA

Input Resistance

R1

Resistance Ratio

R2/R1

Transition Frequency

fT

VCE =-10V, IE =−5mA, f=100MHz *

* Transition frequency of the device

MIN TYP MAX UNIT

-0.5 V

-3

-0.1 -0.3 V

-3.8 mA

-0.5 µA

20

1.54 2.2 2.86 KΩ

0.8 1 1.2

250

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-086,A

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