2SB1216 Ver la hoja de datos (PDF) - SANYO -> Panasonic
Número de pieza
componentes Descripción
Fabricante
2SB1216 Datasheet PDF : 5 Pages
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2SB1216/2SD1816
( ) : 2SB1216
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)0.5A
VCE=(–)5V, IC=(–)3A
VCE=(–)10V, IC=(–)0.5A
Output Capacitance
Collector-to-Emitter Saturation Voltage
Cob
VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)2A, IB=(–)0.2A
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)2A, IB=(–)0.2A
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
Fall Time
tf
See specified Test Circuit
* : The 2SB1216/2SD1816 are classified by 0.5A hFE as follows :
70 Q 140 100 R 200 140 S 280 200 T 400
Switching Time Test Circuit
Ratings
Unit
(–)120 V
(–)100 V
(–)6 V
(–)4 A
(–)8 A
1W
20 W
150 ˚C
–55 to +150 ˚C
Ratings
min typ
70*
40
(–)120
(–)100
(–)6
(130)
180
(65)40
150
(–200)
(–)0.9
100
(800)
900
50
max
(–)1
(–)1
400*
400
(–500)
(–)1.2
Unit
µA
µA
MHz
MHz
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
No.2540–2/5
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