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BUD43B Datasheet PDF : 4 Pages
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BUD43B
SWITCHMODEt NPN Silicon
Planar Power Transistor
The BUD43B has an application specific state−of−the−art die
designed for use in 220 V line operated Switchmode Power supplies
and electronic ballast (“light ballast”). The main advantages brought
by this new transistor are:
• Improved Efficiency Due to Low Base Drive Requirements:
• High and Flat DC Current Gain hFE
• Fast and Tightened Switching Distributions
• No Coil Required in Base Circuit for Fast Turn−off
(no current tail)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Total Device Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Derate above 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Junction to Case
— Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Purposes: 1/8″ from case for 5 seconds
Symbol Value
VCEO
350
VCBO
650
VCES
650
VEBO
9
IC
2
ICM
4
IB
1
IBM
2
PD
25
0.2
TJ, Tstg – 65 to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
RθJC
RθJA
TL
_C/W
5
71.4
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle.
http://onsemi.com
POWER TRANSISTORS
2 AMPERES
700 VOLTS, 25 WATTS
CASE 369−07
CASE 369A−13
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
6.7
0.265
1.6
0.063
2.3 2.3
0.090 0.090
1.6
0.063
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
BUD43B/D
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