BUZ80A Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BUZ80A

SIPMOS ® Power Transistor

Siemens AG 

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

BUZ 80A

Pin 1

G

Pin 2

D

Pin 3

S

Type

BUZ 80A

VDS

ID

800 V 3 A

RDS(on)

3Ω

Maximum Ratings

Parameter

Drain source voltage

Drain-gate voltage

RGS = 20 kΩ

Continuous drain current

TC = 50 °C

Pulsed drain current

TC = 25 °C

Gate source voltage

Power dissipation

TC = 25 °C

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Package

TO-220 AB

Ordering Code

C67078-A1309-A3

Symbol

VDS

VDGR

ID

IDpuls

VGS

Ptot

Tj

Tstg

RthJC

RthJA

Values

Unit

800

V

800

A

3

12

± 20

V

W

75

-55 ... ...+ 150 °C

-55 ... ...+ 150

≤ 1.67

K/W

75

E

55 / 150 / 56

Semiconductor Group

1

07/96

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