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MJ13333

SWITCHMODE Series NPN Silicon Power Transistor

ON Semiconductor 

ON Semiconductort

SWITCHMODEt Series

NPN Silicon Power Transistor

MJ13333

The MJ13333 transistor is designed for high voltage, high–speed,

power switching in inductive circuits where fall time is critical. It is

particularly suited for line operated SWITCHMODE applications

such as:

20 AMPERE

NPN SILICON

POWER TRANSISTORS

400–500 VOLTS

• Switching Regulators

175 WATTS

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

• Fast Turn Off Times

200 ns Inductive Fall Time — 25_C (Typ)

1.8 µs Inductive Storage Time — 25_C (Typ)

• Operating Temperature Range –65 to +200_C

CASE 1–07

TO–204AA

(TO–3)

• 100_C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous

Peak (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 100_C

Derate above 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v10%.

Symbol

VCEO

VCEV

VEB

IC

ICM

IB

IBM

PD

TJ, Tstg

Symbol

RθJC

TL

Value

400

700

6.0

20

30

10

15

175

100

1.0

–65 to +200

Max

1.0

275

Unit

Vdc

Vdc

Vdc

Adc

Adc

Watts

W/_C

_C

Unit

_C/W

_C

(1) Similar device types available with lower VCEO ratings, see the MJ13330 (200 V) and MJ13331 (250 V).

© Semiconductor Components Industries, LLC, 2001

1

March, 2001 – Rev. 3

Publication Order Number:

MJ13333/D

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