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SST39VF1601 Datasheet PDF : 31 Pages
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Data Sheet
AC CHARACTERISTICS
16 Mbit / 32 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201
SST39VF1602 / SST39VF3202
TABLE 15: Read Cycle Timing Parameters VDD = 2.7-3.6V
Symbol Parameter
Min
Max
Units
TRC
Read Cycle Time
70
ns
TCE
Chip Enable Access Time
70
ns
TAA
Address Access Time
70
ns
TOE
Output Enable Access Time
35
ns
TCLZ1
TOLZ1
CE# Low to Active Output
OE# Low to Active Output
0
ns
0
ns
TCHZ1
CE# High to High-Z Output
20
ns
TOHZ1
TOH1
OE# High to High-Z Output
Output Hold from Address Change
20
ns
0
ns
TRP1
RST# Pulse Width
500
ns
TRHR1
TRY1,2
RST# High before Read
RST# Pin Low to Read Mode
50
ns
20
µs
T15.3 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations.
This parameter does not apply to Chip-Erase operations.
TABLE 16: Program/Erase Cycle Timing Parameters
Symbol Parameter
Min
Max
Units
TBP
Word-Program Time
TAS
Address Setup Time
TAH
Address Hold Time
10
µs
0
ns
30
ns
TCS
TCH
TOES
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
0
ns
0
ns
0
ns
TOEH
TCP
TWP
TWPH1
TCPH1
TDS
TDH1
TIDA1
TSE
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
10
ns
40
ns
40
ns
30
ns
30
ns
30
ns
0
ns
150
ns
25
ms
TBE
TSCE
Block-Erase
Chip-Erase
25
ms
50
ms
T16.1 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2008 Silicon Storage Technology, Inc.
14
S71223-05-000
6/08
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